Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
US4857983A · kind A · utility
27Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1987 |
| Grant date | Aug 15, 1989 |
| Priority date | — |
| Expiry date | May 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/131
Abstract
The present invention relates generally to monolithically integrated insulated gate semiconductor devices and more particularly to an improved structure which provides for high current density, low voltage drop conduction in both forward and reverse directions. More particularly, a single insulated gate device can initiate and interrupt current flow in both the forward and reverse directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.