Method of making a trench capacitor for dram
US4859622A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 1988 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Aug 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
Two or three trenches are formed in a silicon substrate, and a conductive layer is formed in the silicon substrate facing the trenches. An oxide film for insulation is formed on a surface of the conductive layer facing the trenches. The trenches are filled with polysilicon, and the conductive layer and the polysilicon constitute a capacitor through the oxide film. Since this capacitor has two or three trenches, an effective area sufficiently large for increasing a capacitance value of the capacitor can be obtained without increasing the plane area of the device. The conductive layer and the polysilicon are connected to aluminum interconnection layers through a silicide layer, so as to be connected to other integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.