Semiconductor electro-optical conversion
US4860066A · kind A · utility
3Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1987 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Jan 8, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
Abstract
An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap>1 electron volt in a layer between 20 and 200 Angstroms thick. A GaAs covered by GaAlAs converter with a 100 Angstrom Si layer over the GaAlAs is illustrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.