Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy
US4861393A · kind A · utility
20Cited by
9References
12Claims
0Family size
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Key dates
| Filing date | May 28, 1987 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | May 28, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.