Method of growing group III-V compound semiconductor epitaxial layer
US4861417A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1988 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Mar 24, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy grows an aluminum layer on one of {100}, (111)B, ( 111)B, (111)B, and (111)B planes of the substrate by supplying a quantity of aluminum amounting to at least two times a surface density in a group III-V compound semiconductor epitaxial layer or grows an aluminum layer on one of {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density in the group III-V compound semiconductor epitaxial layer, and grows a layer of a group V material on the aluminum layer by supplying a quantity of the group V material amounting to at least two or three times a surface density in the group III-V compound semiconductor epitaxial layer. The layer of the group V material and the aluminum layer constituting the group III-V compound semiconductor epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.