Inventor · Yokohama, JP

Masashi Ozeki

13Patents
7h-index
26Co-inventors
66Inventor score

Filing activity: Mar 24, 1988 → Oct 21, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US5484664A Hetero-epitaxially grown compound semiconductor substrate Emerging Cross-Sectional Technologies 166 Expired
US5270247A Atomic layer epitaxy of compound semiconductor Emerging Cross-Sectional Technologies 166 Expired
US5166092A Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy Electricity 151 Expired
US5300186A Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same Emerging Cross-Sectional Technologies 90 Expired
US5130269A Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same Emerging Cross-Sectional Technologies 85 Expired
US4861417A Method of growing group III-V compound semiconductor epitaxial layer Emerging Cross-Sectional Technologies 81 Expired
US7770557B2 Throttle body, method of adjusting opening of opener, and method of manufacturing throttle body Emerging Cross-Sectional Technologies 8 Active
US8635986B2 Rotation angle sensors Mechanical Engineering; Lighting; Heating 6 Active
US5296088A Compound semiconductor crystal growing method Emerging Cross-Sectional Technologies 5 Expired
US5497024A GaAs MIS device Electricity 5 Expired
US8444904B2 Resin gear Emerging Cross-Sectional Technologies 4 Active
US7716828B2 Method of manufacturing throttle body, and throttle body Emerging Cross-Sectional Technologies 3 Active
US7047936B2 Throttle bodies and methods of manufacturing such throttle bodies Emerging Cross-Sectional Technologies 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.