Low leakage battery protection diode structure
US4862310A · kind A · utility
21Cited by
5References
32Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1988 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Apr 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A battery protection device for preventing battery charging comprises a diode formed with a p+ region (36) within an N-type region (34). The diode is completely surrounded by a P-well (32) to prevent minority carrier injection from the N-type region (34) to the N-type substrate (30). The N-type region (34) is connected to the P-well (32) and to the substrate (30) through an electrical connection (43). By preventing minority carrier injection into the substrate (30), leakage through a parasitic transistor is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.