Thomas E. Harrington, III
37Patents
10h-index
29Co-inventors
75Inventor score
Filing activity: Apr 29, 1988 → Nov 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6306718A | Method of making polysilicon resistor having adjustable temperature coefficients | Electricity | 41 | Expired |
| US4943537A | CMOS integrated circuit with reduced susceptibility to PMOS punchthrough | Electricity | 38 | Expired |
| US5181091A | Integrated circuit with improved protection against negative transients | Electricity | 35 | Expired |
| US4950620A | Process for making integrated circuit with doped silicon dioxide load elements | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5122474A | Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough | Electricity | 31 | Expired |
| US4906588A | Enclosed buried channel transistor | Electricity | 25 | Expired |
| US4980746A | Integrated circuit with improved battery protection | Electricity | 23 | Expired |
| US4862310A | Low leakage battery protection diode structure | Electricity | 21 | Expired |
| US5688722A | CMOS integrated circuit with reduced susceptibility to PMOS punchthrough | Electricity | 14 | Expired |
| US5682051A | CMOS integrated circuit with reduced susceptibility to PMOS punchthrough | Electricity | 12 | Expired |
| US7376619B1 | Method and system for rapid tenant screening, lease recommendation, and automatic conversion/transcription of data into lease documents | Physics | 10 | Expired |
| US5159426A | Integrated circuit with improved battery protection | Electricity | 7 | Expired |
| US9117899B2 | Device architecture and method for improved packing of vertical field effect devices | Electricity | 3 | Active |
| US9806186B2 | Termination region architecture for vertical power transistors | Electricity | 2 | Active |
| US9755058B2 | Surface devices within a vertical power device | Electricity | 2 | Active |
| US10074735B2 | Surface devices within a vertical power device | Electricity | 1 | Active |
| US11190854B2 | Content-modification system with client-side advertisement caching | Electricity | 1 | Active |
| US9496386B2 | Device architecture and method for improved packing of vertical field effect devices | Electricity | 1 | Active |
| US10580884B2 | Super junction MOS bipolar transistor having drain gaps | Electricity | 1 | Active |
| US12159909B2 | Power semiconductor device with reduced strain | Electricity | 0 | Active |
| US10134890B2 | Termination region architecture for vertical power transistors | Electricity | 0 | Active |
| US8987778B1 | On-chip electrostatic discharge protection for a semiconductor device | Electricity | 0 | Active |
| US12376332B2 | Edge termination structures for semiconductor devices | Electricity | 0 | Active |
| US11985393B2 | Content-modification system with client-side advertisement caching | Electricity | 0 | Active |
| US11769828B2 | Gate trench power semiconductor devices having improved deep shield connection patterns | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.