Method and apparatus for cleaning integrated circuit wafers
US4863561A · kind A · utility
73Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1988 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Sep 26, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The described embodiment of the present invention provides a method and device for cleaning the surface of a silicon wafer using dry gases. At least one of the gases provided is excited by passing the gas through a microwave plasma generator or by heating the wafer thereby exciting the gases near the surface of the wafer. The excitation of the gases causes chemical reactions similar to those induced by ionization of the nongaseous cleaning materials in water. After a suitable etching period, the etching chamber is purged using an insert gas, such as nitrogen, which helps carry away the remaining reacted contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.