Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
US4863755A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1987 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Oct 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a process for the production of a solid thin film containing silicon and nitrogen on a substrate, said film having an aggregate low concentration of inorganic carbon and oxygen of less than about 51 atom percent, which process comprises: PA1 (A) contacting the substrate with a gaseous mixture itself comprising: PA2 (i) a volatile cyclic organic silicon-nitrogen source, and PA2 (ii) a reactant independently selected from hydrogen or a hydrogen-nitrogen source, under plasma enhanced chemical vapor deposition conditions of pressure lower than 10 Torr and temperature greater than ambient temperature for a time sufficient to produce a silicon nitride thin film. In another aspect, the invention relates to the silicon-nitride thin film coated article or substrate produced by the process of the present invention. Preferred process conditions evaluates include the RF of 13.56 MHz, 20-80 W Power, power density 0.37 watts/cm.sup.2 to 1.5 watts/cm.sup.2 and a ratio of the silicon-nitrogen source and the hydrogen nitrogen source of between about 0.1/19.9 and 0.6/19.4 percent by volume. When ammonia is used, the aggregate concentration of carbon and oxygen is less than …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.