Postive working multi-level photoresist
US4863827A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1986 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Oct 20, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for forming a multi-level positive working photosensitive element. One forms a composition containing an alkali soluble resin, an o-quinonediazide compound and an in-situ generated acid catalyzed crosslinker in a solvent mixture. After coating on a substrate, drying and partially cross-linking the first layer, a second positive working light sensitive layer is applied. Each light sensitive layer is activated by u.v. radiation in different parts of the spectrum. The top layer is imagewise exposed and developed to form a mask. The second layer is flood exposed through this mask and developed. Each development is conducted with an aqueous alkaline solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.