Sangya Jain
10Patents
7h-index
10Co-inventors
55Inventor score
Filing activity: Feb 28, 1985 → Nov 19, 1992
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4863827A | Postive working multi-level photoresist | Physics | 53 | Expired |
| US5019488A | Method of producing an image reversal negative photoresist having a photo-labile blocked imide | Physics | 24 | Expired |
| US4931381A | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment | Emerging Cross-Sectional Technologies | 21 | Expired |
| US4588670A | Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist | Physics | 19 | Expired |
| US4929536A | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4835086A | Polysulfone barrier layer for bi-level photoresists | Physics | 10 | Expired |
| US5399456A | Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5256522A | Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5217840A | Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5240807A | Photoresist article having a portable, conformable, built-on mask | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.