Heteroepitaxial growth of SiC on Si
US4865659A · kind A · utility
14Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1987 |
| Grant date | Sep 12, 1989 |
| Priority date | — |
| Expiry date | Nov 24, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.