Atsuko Uemoto
4Patents
4h-index
6Co-inventors
39Inventor score
Filing activity: Aug 18, 1987 → Sep 25, 1991
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4897710A | Semiconductor device | Electricity | 54 | Expired |
| US4990994A | Electrode structure for silicon carbide semiconductors | Electricity | 42 | Expired |
| US5229625A | Schottky barrier gate type field effect transistor | Electricity | 27 | Expired |
| US4865659A | Heteroepitaxial growth of SiC on Si | Emerging Cross-Sectional Technologies | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.