Method for etch of polysilicon film
US4867841A · kind A · utility
130Cited by
20References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1988 |
| Grant date | Sep 19, 1989 |
| Priority date | — |
| Expiry date | May 27, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.