Patent · US Expired

Method for preparing substrates for deposition of metal seed from an organometallic vapor for subsequent electroless metallization

US4869930A · kind A · utility

22Cited by
10References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 12, 1988
Grant dateSep 26, 1989
Priority date
Expiry dateJul 12, 2008

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K3/184
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A process for preparing a substrate, e.g., an epoxy printed circuit board, for subsequent metallization. Active chemical sites are formed adhering to the substrate surface. The substrate is then exposed to a vapor of a volatile organometallic compound, which chemically reacts with the active sites and is decomposed to at least a species of the metal constituent of the compound. This species adheres to the substrate and can be transformed into the free metal which is useful as a seed for subsequent electroless deposition of a metal thereon. If selective deposition is desired, a resist masking layer is used prior to forming the seed layer. Volatile organopalladium compounds, such as (cyclopentadienyl)(allyl)palladium and bis(allyl)pallidium, are particularly effective for depositing a palladium seed which is particularly effective for electroless deposition of copper.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.