Process for preparing semiconductor layer
US4869976A · kind A · utility
3Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1984 |
| Grant date | Sep 26, 1989 |
| Priority date | — |
| Expiry date | Sep 21, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process for preparing a semiconductor layer by means of high frequency glow discharge generated between a ground electrode and a RF electrode, the improvement which comprises controlling a DC potential difference between the electrodes at a voltage of not more than 10 V. According to the process, the semiconductor layer formed on the RF electrode side is satisfactory in electrical and electronical properties, and can be practically used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.