Method and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system
US4871433A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1987 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Sep 10, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/351
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering apparatus and method, in which the ion flux bombarding the substrate is made uniform. Countermagnet means are chosen and positioned such that the vertical components of the countermagnet field are of opposite direction and equal magnitude to the vertical components of the cathode magnet in the vicinity of the substrate. Thus, the cathode magnetic field lines become substantially flat in the vicinity of the substrate and do not cause the ion flux to be distributed on the substrate surface in a non-uniform manner. Measurement of ion current density on the substrate surface during operation of the invention reveals that the invention provides substantially constant flux at all points on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.