Ohmic contacts and interconnects to silicon and method of making same
US4871617A · kind A · utility
8Cited by
8References
10Claims
0Family size
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Key dates
| Filing date | Apr 2, 1984 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Apr 2, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1284
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon of low resistivity to form a low resistance contact therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.