Self restoring ferroelectric memory
US4873664A · kind A · utility
239Cited by
12References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 12, 1987 |
| Grant date | Oct 10, 1989 |
| Priority date | — |
| Expiry date | Feb 12, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory uses cells with a ferroelectric capacitor having one plate coupled to a bit line by a FET and another plate coupled to a plate line. A pulse on the plate line causes the bit line to change voltage based on the state of the cell. A dummy cell arrangement is disclosed using one capacitor per cell, and another embodiment uses two capacitors per cell with no dummy. The cells cooperate with a sense amplifier and timing signals so that they are self restoring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.