Fabrication method of bipolar transistor
US4874712A · kind A · utility
3Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1988 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | Sep 26, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Present invention relates to the fabrication method of the bipolar transistor. With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type. This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.