Selective etching of tungsten by remote and in situ plasma generation
US4874723A · kind A · utility
22Cited by
13References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1987 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | Jul 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film etching process, wherein the rate of deposition of a robust sidewall passivant is controlled so that passivants can be continually deposited on the sidewalls of the resist pattern to change the geometry of the resist pattern during the processing step. That is, the existing pattern is modified as if a sidewall filament has been deposited on it, which can be advantageous for many purposes, without the added process complexity required by a sidewall filament process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.