Focused ion beam imaging and process control
US4874947A · kind A · utility
68Cited by
15References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1988 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | Feb 26, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3056
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ion beam machining apparatus which uses a focused ion beam to sputter particles from a target is disclosed. The beam is scanned over the target and photons emitted in response to the incidence of the beam on the target are analyzed to identify the different materials in the target and the location of these materials. Electrons are projected in a stream to the impingement site of the ion beam, in order to neutralize the charge produced by the beam and thereby stabilize the position of this site, and the photon detectors are isolated from any light emitted by the electron source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.