Silicon-on-insulator integrated circuits and method
US4875086A · kind A · utility
45Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1987 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | May 22, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Preferred embodiments include silicon-on-insulator structures (30) and integrated circuits include a thin single crystal silicon layer (32) on a silicon dioxide layer (34) which is on a polysilicon layer (36) bonded to a surface-oxidized silicon substrate (42) by a glass layer (38). Also, single crystal silicon layers on oxide on polysilicon substrates and methods of fabrication are included in the preferred embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.