Low top gate resistance JFET structure
US4876579A · kind A · utility
26Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1989 |
| Grant date | Oct 24, 1989 |
| Priority date | — |
| Expiry date | Jan 26, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A JFET having top gate contact regions formed in either one or both of the source and drain regions at and contacting a substantial portion of the edge terminations of the top gate in the source and drain regions. The improved top gate contact region can be used in three and four terminal JFET's.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.