In situ doped polysilicon using tertiary butyl phosphine
US4877753A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 1, 1988 |
| Grant date | Oct 31, 1989 |
| Priority date | — |
| Expiry date | Mar 1, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a method of forming in situ phosphorous doped polysilicon wherein a surface upon which phosphorous doped polysilicon is to be deposited is placed in a vacuum furnace and, after low pressure HCl cleaning of the surface and furnace, a predetermined ratio of silane and a gaseous phosphorous containing compound taken from the class consisting of phosphorous trichloride, tertiary butyl phosphine, isobutyl phosphine, trimethyl phosphate and tetramethyl phosphate are simultaneously passed through the furnace at predetermined pressure and temperature to provide a uniformly phosphorous doped layer of polysilicon on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.