Method for etching titanium nitride local interconnects
US4878994A · kind A · utility
118Cited by
2References
53Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1988 |
| Grant date | Nov 7, 1989 |
| Priority date | — |
| Expiry date | Mar 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for the etching of titanium containing film which utilizes both in situ and remote plasmas, and a gas mixture for the plasmas which comprises a halogen gas at low pressure and moderate temperature to produce an etch which is both selective to selected materials, for example, titanium silicide etc., and anisotropic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.