Semiconductor device with isolation between MOSFET and control circuit
US4879584A · kind A · utility
25Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1988 |
| Grant date | Nov 7, 1989 |
| Priority date | — |
| Expiry date | Feb 10, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.