Koichi Kitahara
19Patents
11h-index
28Co-inventors
72Inventor score
Filing activity: Jun 14, 1982 → Nov 26, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5261241A | Refrigerant | Chemistry; Metallurgy | 36 | Expired |
| US4948748A | Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5493148A | Semiconductor device whose output characteristic can be adjusted by functional trimming | Electricity | 30 | Expired |
| US4996030A | Method for cleaning exhaust gases | Chemistry; Metallurgy | 28 | Expired |
| US4879584A | Semiconductor device with isolation between MOSFET and control circuit | Electricity | 25 | Expired |
| US5194233A | Process for purification of rare gas | Chemistry; Metallurgy | 23 | Expired |
| US4910001A | Method for cleaning gas containing toxic component | Performing Operations; Transporting | 23 | Expired |
| US4743435A | Method for cleaning exhaust gases | Performing Operations; Transporting | 22 | Expired |
| US4985745A | Substrate structure for composite semiconductor device | Electricity | 19 | Expired |
| US5670445A | Cleaning agent of harmful gas and cleaning method | Performing Operations; Transporting | 13 | Expired |
| US5429762A | Cooling agent | Mechanical Engineering; Lighting; Heating | 11 | Expired |
| US5418383A | Semiconductor device capable of previously evaluating characteristics of power output element | Electricity | 9 | Expired |
| US4976942A | Method for purifying gaseous hydrides | Chemistry; Metallurgy | 7 | Expired |
| US5294422A | Process for purification of rare gas | Chemistry; Metallurgy | 7 | Expired |
| US5019364A | Method for purifying gaseous hydrides | Chemistry; Metallurgy | 6 | Expired |
| US4731333A | Method for detecting gaseous hydrides | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4398040A | Process for producing trimellitic acid | Chemistry; Metallurgy | 3 | Expired |
| USRE34025E | Semiconductor device with isolation between MOSFET and control circuit | General | 1 | Expired |
| US6740565B2 | Process for fabrication of a SIMOX substrate | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.