Facedown-type semiconductor pressure sensor with spacer
US4881056A · kind A · utility
12Cited by
1References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1988 |
| Grant date | Nov 14, 1989 |
| Priority date | — |
| Expiry date | Apr 11, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/147
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.