Takeshi Miyajima
30Patents
11h-index
40Co-inventors
75Inventor score
Filing activity: Nov 9, 1982 → Feb 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5976936A | Silicon carbide semiconductor device | Emerging Cross-Sectional Technologies | 206 | Expired |
| US5915180A | Process for producing a semiconductor device having a single thermal oxidizing step | Emerging Cross-Sectional Technologies | 154 | Expired |
| US6020600A | Silicon carbide semiconductor device with trench | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6133587A | Silicon carbide semiconductor device and process for manufacturing same | Electricity | 99 | Expired |
| US6703707B1 | Semiconductor device having radiation structure | Electricity | 66 | Expired |
| US5744826A | Silicon carbide semiconductor device and process for its production | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5696396A | Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation | Electricity | 41 | Expired |
| US5723376A | Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4785667A | Method of measuring inclining angle of planar defect of solid material by ultrasonic wave | Physics | 15 | Expired |
| US4881056A | Facedown-type semiconductor pressure sensor with spacer | Physics | 12 | Expired |
| US4484475A | Method of measuring contact stress at contacting surfaces of abutting solid masses | Physics | 12 | Expired |
| US6809348B1 | Semiconductor device and method for manufacturing the same | Electricity | 10 | Expired |
| US6548386B1 | Method for forming and patterning film | Electricity | 10 | Expired |
| US5005420A | Ultrasonic method for measurement of depth of surface opening flaw in solid mass | Physics | 10 | Expired |
| US6133120A | Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4914952A | Ultrasonic method for measurement of size of any flaw within solid mass | Physics | 9 | Expired |
| US6476458B2 | Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element | Electricity | 7 | Expired |
| US4694698A | Method of measuring factor of stress concentration by utilizing ultrasound | Physics | 6 | Expired |
| US5998268A | Manufacturing method of semiconductor device with a groove | Electricity | 4 | Expired |
| US8421154B2 | Semiconductor device having super junction structure and method for manufacturing the same | Electricity | 3 | Active |
| US7932132B2 | Semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US8106453B2 | Semiconductor device having super junction structure | Electricity | 2 | Active |
| US8018028B2 | Semiconductor device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US7635622B2 | Method for manufacturing a vertical transistor that includes a super junction structure | Emerging Cross-Sectional Technologies | 1 | Active |
| US9368575B2 | Semiconductor device having super junction structure and method for manufacturing the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.