Semiconductor laser having a multiple quantum well structure doped with impurities
US4881235A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1987 |
| Grant date | Nov 14, 1989 |
| Priority date | — |
| Expiry date | Apr 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S372/704
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.