Method of laser enhanced vapor phase growth for compound semiconductor
US4885260A · kind A · utility
19Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1988 |
| Grant date | Dec 5, 1989 |
| Priority date | — |
| Expiry date | Feb 16, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.