Minoru Kubo
41Patents
14h-index
44Co-inventors
81Inventor score
Filing activity: Oct 15, 1985 → Nov 9, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6399970B2 | FET having a Si/SiGeC heterojunction channel | Electricity | 185 | Expired |
| US6190975A | Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer | Electricity | 140 | Expired |
| US6852602B2 | Semiconductor crystal film and method for preparation thereof | Electricity | 100 | Expired |
| US5751013A | Semiconductor light-emitting device and production method thereof | Electricity | 50 | Expired |
| US6597016B1 | Semiconductor device and method for fabricating the same | Electricity | 42 | Expired |
| US6674100B2 | SiGeC-based CMOSFET with separate heterojunctions | Electricity | 27 | Expired |
| US6844227B2 | Semiconductor devices and method for manufacturing the same | Electricity | 25 | Expired |
| US6403976B1 | Semiconductor crystal, fabrication method thereof, and semiconductor device | Electricity | 20 | Expired |
| US4885260A | Method of laser enhanced vapor phase growth for compound semiconductor | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5895225A | Semiconductor light-emitting device and production method thereof | Electricity | 18 | Expired |
| US6645836B2 | Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon | Electricity | 17 | Expired |
| US6136626A | Semiconductor light-emitting device and production method thereof | Electricity | 16 | Expired |
| US6965107B2 | Semiconductor-based encapsulated infrared sensor and electronic device | Electricity | 15 | Expired |
| US6133058A | Fabrication of semiconductor light-emitting device | Electricity | 15 | Expired |
| US6890834B2 | Electronic device and method for manufacturing the same | Electricity | 14 | Expired |
| US6277657A | Apparatus for fabricating semiconductor device and fabrication method therefor | Electricity | 13 | Expired |
| US5863834A | Semiconductor device and method of manufacturing the same | Electricity | 13 | Expired |
| US5274248A | Light-emitting device with II-VI compounds | Electricity | 11 | Expired |
| US6537369B1 | SiGeC semiconductor crystal and production method thereof | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5619520A | Semiconductor laser | Electricity | 11 | Expired |
| US6759697B2 | Heterojunction bipolar transistor | Electricity | 10 | Expired |
| US5120393A | Method for molecular-beam epitaxial growth | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5705831A | Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method | Electricity | 9 | Expired |
| US6756278B2 | Lateral heterojunction bipolar transistor and method of fabricating the same | Electricity | 8 | Expired |
| US6815735B2 | Semiconductor device | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.