Chemical modification of spin-on glass for improved performance in IC fabrication
US4885262A · kind A · utility
118Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1989 |
| Grant date | Dec 5, 1989 |
| Priority date | — |
| Expiry date | Mar 8, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31058
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for chemically modifying spin-on-glass (SOG) for improved performance in semiconductor device fabrication is disclosed. To compensate for severe surface topographies associated with very large scale integration (VLSI) technology, a thicker non-etch back SOG process is utilized for forming a SOG layer over a chemical vapor deposition (CVD) layer. A single layer of SOG is formed over the CVD layer, providing planarizing coverage over formational or growth defects. The silylation of the SOG layer provides for the formation thicker single layers of SOG and significantly reduces the wet etching rate in diluted HF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.