Chiu H. Ting
34Patents
24h-index
32Co-inventors
85Inventor score
Filing activity: Dec 19, 1973 → May 5, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5674787A | Selective electroless copper deposited interconnect plugs for ULSI applications | Emerging Cross-Sectional Technologies | 640 | Expired |
| US5969422A | Plated copper interconnect structure | Electricity | 625 | Expired |
| US5695810A | Use of cobalt tungsten phosphide as a barrier material for copper metallization | Electricity | 606 | Expired |
| US5824599A | Protected encapsulation of catalytic layer for electroless copper interconnect | Emerging Cross-Sectional Technologies | 459 | Expired |
| US5891513A | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications | Emerging Cross-Sectional Technologies | 450 | Expired |
| US5913147A | Method for fabricating copper-aluminum metallization | Electricity | 385 | Expired |
| US5830805A | Electroless deposition equipment or apparatus and method of performing electroless deposition | Emerging Cross-Sectional Technologies | 292 | Expired |
| US5972192A | Pulse electroplating copper or copper alloys | Chemistry; Metallurgy | 225 | Expired |
| US6017820A | Integrated vacuum and plating cluster system | Electricity | 142 | Expired |
| US5169680A | Electroless deposition for IC fabrication | Electricity | 119 | Expired |
| US4885262A | Chemical modification of spin-on glass for improved performance in IC fabrication | Electricity | 118 | Expired |
| US6077412A | Rotating anode for a wafer processing chamber | Chemistry; Metallurgy | 115 | Expired |
| US5856705A | Sealed semiconductor chip and process for fabricating sealed semiconductor chip | Electricity | 108 | Expired |
| US6017437A | Process chamber and method for depositing and/or removing material on a substrate | Chemistry; Metallurgy | 85 | Expired |
| US5300461A | Process for fabricating sealed semiconductor chip using silicon nitride passivation film | Electricity | 72 | Expired |
| US5742094A | Sealed semiconductor chip | Electricity | 55 | Expired |
| US4700454A | Process for forming MOS transistor with buried oxide regions for insulation | Electricity | 51 | Expired |
| US6153521A | Metallized interconnection structure and method of making the same | Electricity | 44 | Expired |
| US6271591A | Copper-aluminum metallization | Electricity | 41 | Expired |
| US6187152A | Multiple station processing chamber and method for depositing and/or removing material on a substrate | Electricity | 37 | Expired |
| US3934057A | High sensitivity positive resist layers and mask formation process | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6179982A | Introducing and reclaiming liquid in a wafer processing chamber | Chemistry; Metallurgy | 29 | Expired |
| US6902605B2 | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper | Electricity | 29 | Expired |
| US6794288B1 | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation | Electricity | 28 | Expired |
| US5183795A | Fully planar metalization process | Emerging Cross-Sectional Technologies | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.