Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US4886683A · kind A · utility
19Cited by
8References
44Claims
0Family size
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Key dates
| Filing date | Jun 20, 1986 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Jun 20, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a Group II-VI epitaxial layer on a substrate is described. The method includes the steps of directing a plurality of vapor flows toward the substrate including a Group II metalorganic vapor, a Group VI organic vapor, with said Group VI organic having an organic group bonded to the Group VI element selected from the group consisting of a secondary alkyl, a tertiary alkyl, an allyl, a cycloallyl, and a benzyl, and a Group II elemental metal vapor. The directed flows of Group II metalorganic vapor, Group VI organic vapor and Group II metal vapor are chemically reacted to provide the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.