Ralph Korenstein
21Patents
6h-index
25Co-inventors
69Inventor score
Filing activity: Feb 19, 1980 → Feb 1, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5456207A | Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials | Chemistry; Metallurgy | 348 | Expired |
| US7968865B2 | Boron aluminum nitride diamond heterostructure | Electricity | 20 | Active |
| US4886683A | Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials | Electricity | 19 | Expired |
| US7884373B2 | Gallium nitride layer with diamond layers | Electricity | 10 | Active |
| US4290843A | Epitaxial growth of magnetic memory film on implanted substrate | Electricity | 10 | Expired |
| US5882805A | Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7790072B2 | Treatment method for optically transmissive bodies | Chemistry; Metallurgy | 6 | Active |
| US7888171B2 | Fabricating a gallium nitride layer with diamond layers | Electricity | 5 | Active |
| US7557378B2 | Boron aluminum nitride diamond heterostructure | Electricity | 4 | Active |
| US8174024B2 | Gallium nitride device with a diamond layer | Electricity | 2 | Active |
| US10550041B1 | Fluoride-based nanocomposite materials for infrared window applications | Chemistry; Metallurgy | 2 | Active |
| US7989261B2 | Fabricating a gallium nitride device with a diamond layer | Electricity | 1 | Active |
| US9064610B2 | Betavoltaic battery with diamond moderator and related system and method | Physics | 1 | Active |
| US11402548B2 | Method of strengthening an optical element | Mechanical Engineering; Lighting; Heating | 1 | Active |
| US12248122B2 | SWIR-MWIR transparent, conductive coating for EMI protection of NCOC | Physics | 0 | Active |
| US10385220B2 | Long wave infrared transparent window and coating materials | Chemistry; Metallurgy | 0 | Active |
| US10000642B2 | Long wave infrared transparent window and coating materials | Chemistry; Metallurgy | 0 | Active |
| US8450185B2 | Semiconductor structures having directly bonded diamond heat sinks and methods for making such structures | Electricity | 0 | Active |
| US12414278B2 | Method for protecting IR transmitting windows and domes from EMI | Physics | 0 | Active |
| US8698161B2 | Semiconductor structures having directly bonded diamond heat sinks and methods for making such structures | Electricity | 0 | Active |
| US11451309B2 | Apertures with dynamically variable electromagnetic properties | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.