Semiconductor device
US4887146A · kind A · utility
34Cited by
5References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 5, 1987 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | May 5, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
Abstract
A semiconductor device having a TiN film serving as a barrier layer and a TiN.sub.x (0.3<X<0.9) film between a wiring layer and a semiconductor substrate is disclosed. Interposition of the TiN.sub.x film between the semiconductor substrate and the TiN film lowers the contact resistance in the contact region between the semiconductor substrate and the wiring layer and also the leakage current and improves the adhesion between the wiring layer and the semiconductor substrate, so that the characteristics and reliability of the semiconductor device are greatly improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.