Monolithically integrated lateral insulated gate semiconductor device
US4888627A · kind A · utility
23Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1987 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | May 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/26
Abstract
A monolithically integrated lateral semiconductor device preferably comprising a pair of inherent transistors driven by an inherent lateral four layer structure is disclosed. The disclosed device includes inherent vertical and lateral bipolar transistors. An inherent lateral four layer structure is also included within the device to provide a sufficient base drive to fully turn on both the lateral and vertical inherent bipolar transistors. The lateral four layer structure can be controlled through an insulated gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.