Non-volatile memory cell and sensing method
US4888733A · kind A · utility
173Cited by
2References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1988 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Sep 12, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory cell has one capacitor isolated from bit lines by two transistors, one on each side. The cell is read by pulsing the capacitor in one direction, then the other, storing developed charge on other capacitors or the like, and comparing voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.