Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US4891330A · kind A · utility
244Cited by
9References
11Claims
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Key dates
| Filing date | Mar 28, 1988 |
| Grant date | Jan 2, 1990 |
| Priority date | — |
| Expiry date | Mar 28, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/122
Abstract
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.