Bipolar transistor controllable by field effect

US4893165A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Gerhard Miller · Landsberg am Lech, DE
• Helmut Strack · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Feb 21, 1989
• Grant date: Jan 9, 1990
• Expiry date: Feb 21, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A field effect controllable bipolar transistor or isolated gate bipolar transistor (IGBT) has a drastically reduced inhibit delay charge, given identical on-state behavior, in that the anode zone has a thickness of less that 1 micrometer, it is doped with implanted ions with a dose of about 1.times.10.sup.12 through 1.times.10.sup.15 cm.sup.-2, and in that the life time of the minority charge carriers in the inner zone amounts to at least 1 microsecond.