Ferroelectric retention method
US4893272A · kind A · utility
60Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1988 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Apr 22, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Polarization retention of a ferroelectric material in a memory cell is improved by open circuiting the write pulse. The depolarizing field is reduced by allowing charge to dissipate through the ferroelectric material, causing a polarizing field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.