Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
US4893313A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1989 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Mar 14, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities: EQU 0.015.DELTA..sup.1/2 <d/.lambda.<0.028.DELTA..sup.-1/2 and EQU .DELTA.=(n.sub.a.sup.2 -n.sub.c.sup.2)/2n.sub.a.sup.2
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.