Yasuo Ohba
75Patents
19h-index
50Co-inventors
87Inventor score
Filing activity: Feb 26, 1987 → Jul 21, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5929466A | Semiconductor device and method of fabricating the same | Electricity | 110 | Expired |
| US5432808A | Compound semicondutor light-emitting device | Electricity | 108 | Expired |
| US5656832A | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness | Electricity | 90 | Expired |
| US5998810A | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer | Electricity | 83 | Expired |
| US5103271A | Semiconductor light emitting device and method of fabricating the same | Electricity | 78 | Expired |
| US5990495A | Semiconductor light-emitting element and method for manufacturing the same | Electricity | 71 | Expired |
| US5042043A | Semiconductor laser using five-element compound semiconductor | Electricity | 67 | Expired |
| US5005057A | Semiconductor light-emitting diode and method of manufacturing the same | Electricity | 61 | Expired |
| US5076860A | AlGaN compound semiconductor material | Emerging Cross-Sectional Technologies | 59 | Expired |
| US6242764A | III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers | Electricity | 57 | Expired |
| US5740192A | Semiconductor laser | Electricity | 51 | Expired |
| US5079184A | Method of manufacturing III-IV group compound semiconductor device | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5168077A | Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5273933A | Vapor phase growth method of forming film in process of manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 29 | Expired |
| US9130127B2 | Semiconductor light emitting device | Electricity | 26 | Active |
| US4792958A | Semiconductor laser with mesa stripe waveguide structure | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5909040A | Semiconductor device including quaternary buffer layer with pinholes | Electricity | 23 | Expired |
| US4809287A | Double-heterostructure semiconductor with mesa stripe waveguide | Electricity | 22 | Expired |
| US4893313A | Semiconductor laser device which has a double-hetero structure having an optimal layer thickness | Electricity | 21 | Expired |
| US4928285A | Impurity-doped semiconductor laser device for single wavelength oscillation | Electricity | 19 | Expired |
| US4835117A | Manufacturing method for semiconductor laser with mesa stripe | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7176479B2 | Nitride compound semiconductor element | Electricity | 16 | Expired |
| US5044794A | Ink ribbon cassette | Performing Operations; Transporting | 16 | Expired |
| US8338844B2 | Semiconductor light emitting apparatus having stacked reflective dielectric films | Electricity | 15 | Active |
| US4949349A | Double-heterostructure semiconductor with mesa stripe waveguide | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.