Method and product for fabricating a resonant-bridge microaccelerometer
US4893509A · kind A · utility
114Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1988 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Dec 27, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0842
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A resonant bridge microaccelerometer is formed using patterned Silicon-on-Insulator (SOI) material. A buried layer is formed in the silicon substrate using preferably oxygen ion implanting techniques. A predetermined proof mass is subsequently formed by selective deposition of an appropriate material on an epitaxially grown layer of silicon generally over the buried layer. The buried layer is subsequently removed by a hydrofluoric acid etch, thereby forming a gap generally everywhere therebetween the proof mass and the supporting silicon substrate, and delineating the resonant microbridges within the microaccelerometer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.