Method of forming silicone film
US4894254A · kind A · utility
18Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1988 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Nov 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.