Compound semiconductor device with superlattice channel region
US4894691A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 24, 1987 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Apr 24, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device having a channel layer which is made of periodically laminated structure of thin-film layers of compound semiconductor substantially being different from each other. The difference of energy between the conduction band and the valence band of compound semiconductor thin-film layers of one side is less than that of the other side thin-film layers, moreover the electron mobility in low electric field application in the thin-film layers of compound semiconductor of one side is greater than that of the other side thin-film layers, besides the electron mobility in high electric field application in the thin-film layers of compound semiconductor of one side is less than that of the other side thin-film layers, and/or the impact ionization of valence electron generated in high electric field application takes place earlier than the thin-film layers of compound semiconductor of the other side. While conduction electron preferentially flows through the thin-film layers of compound semiconductor of one side in low electric field application, and conversely, while conduction electron having substantial energy intensified by acceleration preferentially flows thr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.