Inventor · Kawasaki, JP

Yuichi Matsui

39Patents
10h-index
41Co-inventors
75Inventor score

Filing activity: Mar 31, 1987 → Dec 7, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US5086014A Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film Emerging Cross-Sectional Technologies 43 Expired
US6451665B1 Method of manufacturing a semiconductor integrated circuit Electricity 31 Expired
US5107315A MIS type diamond field-effect transistor with a diamond insulator undercoat Electricity 29 Expired
US6743739B2 Fabrication method for semiconductor integrated devices Electricity 27 Expired
US6326218A Semiconductor integrated circuit and its manufacturing method Electricity 25 Expired
US7408218B2 Semiconductor device having plural dram memory cells and a logic circuit Electricity 24 Expired
US7667218B2 Semiconductor integrated circuit device and method of manufacturing the same Electricity 17 Expired
US4894691A Compound semiconductor device with superlattice channel region Electricity 12 Expired
US6503791B2 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Electricity 11 Expired
US6992022B2 Fabrication method for semiconductor integrated devices Electricity 10 Expired
US7728376B2 Semiconductor memory device Electricity 9 Active
US6555429B2 Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Electricity 9 Expired
US7112819B2 Semiconductor device and manufacturing method thereof Electricity 8 Expired
US6833577B2 Semiconductor device Electricity 8 Expired
US8000126B2 Semiconductor device with recording layer containing indium, germanium, antimony and tellurium Electricity 8 Active
US7638786B2 Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface Electricity 7 Expired
US6483143B2 Semiconductor device having a capacitor structure including a self-alignment deposition preventing film Electricity 7 Expired
US6534375B2 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS Electricity 7 Expired
US7683419B2 Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Electricity 6 Active
US8106441B2 Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Electricity 6 Active
US6720603B2 CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER Electricity 5 Expired
US8044489B2 Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same Emerging Cross-Sectional Technologies 5 Active
US8833857B2 Vehicle seat Performing Operations; Transporting 4 Active
US7804118B2 Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Electricity 4 Active
US4823171A Compound semiconductor device Electricity 4 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.